(SiGe/Si)n/Si quantum wells for enhanced spontaneous emission LEDs

Souren P. Pogossian; Adrian P. Vonsovici; Lili Vescan

doi:10.1117/12.426923

18 May 2001 (SiGe/Si)_n/Si quantum wells for enhanced spontaneous emission LEDs

Souren P. Pogossian, Adrian P. Vonsovici, Lili Vescan

Author Affiliations +

Proceedings Volume 4293, Silicon-based and Hybrid Optoelectronics III; (2001) https://doi.org/10.1117/12.426923
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

We analyse theoretically the feasibility of a vertical (SiGe/Si)n/Si quantum well structures for enhanced spontaneous emission light emitting diodes. The structure can be grown by selective epitaxy on silicon-on-insulator substrate. A design of a LED emitting at 1.3 micrometers wavelength is carried out.

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Souren P. Pogossian, Adrian P. Vonsovici, and Lili Vescan "(SiGe/Si)_n/Si quantum wells for enhanced spontaneous emission LEDs", Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); https://doi.org/10.1117/12.426923

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