Laser wire bonding in power transistors

Franciszek Kostrubiec; Ryszard Pawlak

doi:10.1117/12.405978

2 November 2000 Laser wire bonding in power transistors

Franciszek Kostrubiec, Ryszard Pawlak

Proceedings Volume 4238, Laser Technology VI: Applications; (2000) https://doi.org/10.1117/12.405978
Event: Laser Technology VI, 1999, Szczecin, Poland

Abstract

Attempts at increasing the reliability of assembly of power transistors the authors have proposed a new method for thick wire bonding. Bonding produced in this technology has the form of weld made by the pulsed laser beam. The results of some investigations into the proposed method are presented. The results of studies on semiconductor test structures bring the hope for the positive solution to the problem of increasing the reliability of assembly of such structures.

Citation Download Citation

Franciszek Kostrubiec and Ryszard Pawlak "Laser wire bonding in power transistors", Proc. SPIE 4238, Laser Technology VI: Applications, (2 November 2000); https://doi.org/10.1117/12.405978

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available