Electrostatically vacuum-sealed tunneling magnetic field sensors

Heung-Woo Park; Byeong-Kwon Ju; Duk-Jung Lee; Jung-Ho Park; Myung-Hwan Oh

doi:10.1117/12.418776

16 March 2001 Electrostatically vacuum-sealed tunneling magnetic field sensors

Heung-Woo Park, Byeong-Kwon Ju, Duk-Jung Lee, Jung-Ho Park, Myung-Hwan Oh

Proceedings Volume 4236, Smart Electronics and MEMS II; (2001) https://doi.org/10.1117/12.418776
Event: Smart Materials and MEMS, 2000, Melbourne, Australia

Abstract

This work reports the tunneling effects of the lateral field emitters. Tunneling effect is applicable to the VMFS(vacuum magnetic field sensors). VMFS uses the fact that the trajectory of the emitted electrons are curved by the magnetic field due to Lorentz force. Poly-silicon cantilevers were used as field emitters and anode materials. Thickness of the emitter and the anode were 2μm, respectively. PSG(phospho-silicate-glass) was used as a sacrificial layer and it was etched by HF. Cantilevers were doped with POCl3(1020cm3). 2μm-thick cantilevers were fabricated onto PSG(2μm-thick). Sublimation drying method was used at releasing step to avoid stiction. Then, the device was vacuum sealed. Device was fixed to a sodalime-glass#1 with silver paste and it was wire bonded. Glass#1 has a predefined hole and a sputtered silicon-film at backside. The front-side of the device was sealed with a sodalime-glass#2 using the glass frit. After getter insertion via the hole, backside of the glass#1 was sealed electrostatically with a sodalime-glass#3 at 10-6 torr. After sealing, getter was activated. Sealing was successful to operate the tunneling device. The packaged VMFS showed reduced emission current compared with the chamber test prior to sealing. The emission currents were changed when the magnetic field was induced. A VMFS of angular anodes were tested and its sensitivity was about 3%.

Citation Download Citation

Heung-Woo Park, Byeong-Kwon Ju, Duk-Jung Lee, Jung-Ho Park, and Myung-Hwan Oh "Electrostatically vacuum-sealed tunneling magnetic field sensors", Proc. SPIE 4236, Smart Electronics and MEMS II, (16 March 2001); https://doi.org/10.1117/12.418776

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