PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
In this paper we study the causes of an unusually high N- channel transistor punch through leakage using a shallow trench isolation process. This resistive short between source and drain exhibits high structural dependence and has a strong dependence on the channel length and the total field edge of the device. Unlike the normal off-channel leakage. The leakage current of this resistive short shows weak dependence on temperature. Such a correlation between leakage and structure is examined for the first time in this paper. Experimentation with various trench liner oxidation schemes and gap-fill densification was the key to resolve the leakage.
Yunqiang Zhang,James Lee,Chock Hing Gan,David Vigar, andRavi Sundaresan
"Analysis of N-channel transistor punch-through related to STI process", Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405372
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Yunqiang Zhang, James Lee, Chock Hing Gan, David Vigar, Ravi Sundaresan, "Analysis of N-channel transistor punch-through related to STI process," Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); https://doi.org/10.1117/12.405372