High-power 980-nm laser arrays with nonabsorbing facets

Yi Qu; Baoxue Bo; Baoshun Zhang; Xin Gao; Xingde Zhang; Jiawei Shi

doi:10.1117/12.401716

3 October 2000 High-power 980-nm laser arrays with nonabsorbing facets

Yi Qu, Baoxue Bo, Baoshun Zhang, Xin Gao, Xingde Zhang, Jiawei Shi

Proceedings Volume 4220, Advanced Photonic Sensors: Technology and Applications; (2000) https://doi.org/10.1117/12.401716
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China

Abstract

In this letter we report a novel 980 nm semiconductor laser array structure with nonabsorbing facets to avoid the COMD on facets. The 980 nm laser wafers are grown by MBE. Using quantum-well intermixing, we have fabricated nonabsorbing mirrors on the laser array's facets to resist COMD. The quantum intermixing process involves the deposition of a thin film (200 nm) of sputtered SiO₂ and a subsequent high temperature anneal (680 - 760 degrees Celsius). The cm bars are cleaved to lengths of 1 mm and their rear and front nonabsorbing facets are coated respectively with high and low reflectivity dielectric film by electron-beam. The devices are bonded p-side up onto copper heatsinks using indium solder and mounted on a water-cooled stage which is held at 18 degrees Celsius for all experiments. The emission wavelength of the laser arrays is 980 nm. Continuous wave (CW) output power of 8 W has been achieved.

Citation Download Citation

Yi Qu, Baoxue Bo, Baoshun Zhang, Xin Gao, Xingde Zhang, and Jiawei Shi "High-power 980-nm laser arrays with nonabsorbing facets", Proc. SPIE 4220, Advanced Photonic Sensors: Technology and Applications, (3 October 2000); https://doi.org/10.1117/12.401716

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