Paper
22 January 2001 OPC reticle inspection techniques
Aihua Dong, Bryan W. Reese
Author Affiliations +
Abstract
Current manufacturing techniques for advanced wafers require reticle patterns to contain a variety of OPC structures. These structures include several types and sizes of serifs and assist bars creating many technical challenges for reticle inspection. While these OPC structures have evolved over the past few years, so has KLA-Tencor’s inspection algorithm product line. Photronics and KLA-Tencor are jointly examining the performance of two main algorithms (AOP and ATSdb) regarding their ability to inspect several production reticles containing various serifs and assist bars. By examining the results of these algorithms, their ability to inspect OPC reticle patterns can be compared. Part of the test criteria includes examining the number of real and nuisance defects produced by each inspection. To inspect a variety of serifs and assist bars, each algorithm requires their default sensitivity settings to be modified. These sensitivity settings are then used to inspect a Verimask to reveal their relative sensitivity capabilities. Finally, by comparing the sensitivity results from these Verimask inspections, further analysis of the performance for these algorithms can be accomplished.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aihua Dong and Bryan W. Reese "OPC reticle inspection techniques", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410743
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KEYWORDS
Inspection

Reticles

Optical proximity correction

Defect detection

Defect inspection

Semiconducting wafers

Databases

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