Paper
22 January 2001 Neolithography Consortium: a progress report
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Abstract
The role of process simulation is becoming an increasingly important part of microlithography process control and photomask metrology as wafer feature sizes become smaller than the exposure wavelength, because the pattern transfer from photomask to wafer is nonlinear due to diffraction and other effects.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James E. Potzick "Neolithography Consortium: a progress report", Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); https://doi.org/10.1117/12.410747
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KEYWORDS
Semiconducting wafers

Photomasks

Metrology

Optical lithography

Virtual reality

Etching

Tolerancing

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