Structure and electronic properties of silicon oxynitride as gate dielectric

Kazimierz Jerzy Plucinski; Ivan V. Kityk; Bouchta Sahraoui

doi:10.1117/12.410100

23 August 2000 Structure and electronic properties of silicon oxynitride as gate dielectric

Kazimierz Jerzy Plucinski, Ivan V. Kityk, Bouchta Sahraoui

Proceedings Volume 4182, Process Control and Diagnostics; (2000) https://doi.org/10.1117/12.410100
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States

Abstract

Despite considerable progress achieved over the past few years in understanding ultrathin oxynitrides, several fundamental questions, in particular the oxynitridation mechanism, and the mechanisms behind the beneficial role of nitrogen, are still not well understood. To better understand the explanations which have been proposed for the phenomena specific to silicon oxynitride and for the nature of the defects, a study of the electron structure of a MOS system using silicon oxynitrides as the gate oxide and based on a first-principle molecular dynamic method, was carried out.

Citation Download Citation

Kazimierz Jerzy Plucinski, Ivan V. Kityk, and Bouchta Sahraoui "Structure and electronic properties of silicon oxynitride as gate dielectric", Proc. SPIE 4182, Process Control and Diagnostics, (23 August 2000); https://doi.org/10.1117/12.410100

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