Modeling of the removal rate in chemical mechanical polishing

Van H. Nguyen; Frank G. Shi

doi:10.1117/12.395725

18 August 2000 Modeling of the removal rate in chemical mechanical polishing

Van H. Nguyen, Frank G. Shi

Proceedings Volume 4181, Challenges in Process Integration and Device Technology; (2000) https://doi.org/10.1117/12.395725
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States

Abstract

A new model for the rate of material removal in chemical mechanical polishing has been developed. It is, for the first time, demonstrated that there is a critical pressure resulted from the interaction between the slurry and the pad. The critical pressure can either be positive upward exerted on the wafer or negative downward sucking on the wafer. Moreover, the critical pressure is shown to depend on the relative velocity between the wafer and the pad, the viscosity of the slurry and the pad surface. The removal rate at zero applied load can be significant in the case of a negative downward critical pressure. On the other hand, in the case of a positive upward critical pressure, the CMP removal will not occur until the applied load becomes larger than the critical one.

Citation Download Citation

Van H. Nguyen and Frank G. Shi "Modeling of the removal rate in chemical mechanical polishing", Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); https://doi.org/10.1117/12.395725

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