Backwafer optical lithography and wafer distortion in substrate transfer technologies

Henk W. Van Zeijl; J. Slabbekoorn; L. K. Nanver; Paul W.L. Van Dijk; Axel Berthold; T. Machielsen

doi:10.1117/12.395730

18 August 2000 Backwafer optical lithography and wafer distortion in substrate transfer technologies

Henk W. Van Zeijl, J. Slabbekoorn, L. K. Nanver, Paul W.L. Van Dijk, Axel Berthold, T. Machielsen

Proceedings Volume 4181, Challenges in Process Integration and Device Technology; (2000) https://doi.org/10.1117/12.395730
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States

Abstract

A method has been developed by which, after removal of the bulk silicon in a substrate transfer process, the backside of a wafer can be processed with the same lithography as the front side of the wafer. To achieve an accurate front-to-backwafer alignment accuracy, mirror symmetric alignment markers for an ASML PAS5000 waferstepper have been developed and applied in a Silicon-on- Anything process. In this manner minimum dimension low-ohmic contacts were fabricated on the backwafer. The mirror symmetric alignment markers are used in combination with standard overlay test procedures to characterize the front-to backwafer overlay accuracy. The measured overlay errors are divided up in non- mirror symmetric lens distortions and wafer distortion as a result of the substrate transfer process. The practical minimum device feature that can be realized on the backwafer is limited to 0.9-1.2 micrometers as a result of front-to-backwafer overlay errors.

Citation Download Citation

Henk W. Van Zeijl, J. Slabbekoorn, L. K. Nanver, Paul W.L. Van Dijk, Axel Berthold, and T. Machielsen "Backwafer optical lithography and wafer distortion in substrate transfer technologies", Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); https://doi.org/10.1117/12.395730

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