HARM processing techniques for MEMS and MOEMS devices using bonded SOI substrates and DRIE

Colin Gormley; Anne Boyle; Viji Srigengan; Scott C. Blackstone

doi:10.1117/12.396476

25 August 2000 HARM processing techniques for MEMS and MOEMS devices using bonded SOI substrates and DRIE

Colin Gormley, Anne Boyle, Viji Srigengan, Scott C. Blackstone

Proceedings Volume 4174, Micromachining and Microfabrication Process Technology VI; (2000) https://doi.org/10.1117/12.396476
Event: Micromachining and Microfabrication, 2000, Santa Clara, CA, United States

Abstract

Silicon-on-Insulator (SOI) MEMS devices (1) are rapidly gaining popularity in realizing numerous solutions for MEMS, especially in the optical and inertia application fields. BCO recently developed a DRIE trench etch, utilizing the Bosch process, and refill process for high voltage dielectric isolation integrated circuits on thick SOI substrates. In this paper we present our most recently developed DRIE processes for MEMS and MOEMS devices. These advanced etch techniques are initially described and their integration with silicon bonding demonstrated. This has enabled process flows that are currently being utilized to develop optical router and filter products for fiber optics telecommunications and high precision accelerometers.

Citation Download Citation

Colin Gormley, Anne Boyle, Viji Srigengan, and Scott C. Blackstone "HARM processing techniques for MEMS and MOEMS devices using bonded SOI substrates and DRIE", Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); https://doi.org/10.1117/12.396476

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