Holographic recording in amorphous chalcogenide semiconductor thin films

Janis Teteris; Mara J. Reinfelde

doi:10.1117/12.402463

3 October 2000 Holographic recording in amorphous chalcogenide semiconductor thin films

Janis Teteris, Mara J. Reinfelde

Proceedings Volume 4149, Holography 2000; (2000) https://doi.org/10.1117/12.402463
Event: Holography 2000, 2000, St. Poelton, Austria

Abstract

The photo induced changes of optical properties and holographic recording in amorphous chalcogenide semiconductor As-S-Se and As₂S₃ thin films have been studied. The possibilities of the practical applications of these materials as the photoresists for the production of the relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency of the holograms.

Citation Download Citation

Janis Teteris and Mara J. Reinfelde "Holographic recording in amorphous chalcogenide semiconductor thin films", Proc. SPIE 4149, Holography 2000, (3 October 2000); https://doi.org/10.1117/12.402463

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