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15 December 2000 New uncooled thermal IR detector using silicon-diode-micromachined isolated silicon diode for IR detection (MISIR)
Jae-Kwan Kim, Chul-Hi Han
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Proceedings Volume 4130, Infrared Technology and Applications XXVI; (2000) https://doi.org/10.1117/12.409846
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States
Abstract
A new thermal infrared detector using temperature characteristics of a diode has been developed. This micromachined isolated silicon diode for IR detection (MISIR) utilizes an electrochemical etching technique to achieve the thermal isolation of the diode. Experimental dependence of the diode current on the junction temperature enables a high responsivity of the MISIR and the electrochemical etch stop provides an effective isolation at simple and low-cost. The fabricated MISIR has demonstrated a detectivity of 1.2x1010(cm(DOT)HzHLF/W) at room temperature in air ambient.
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Jae-Kwan Kim and Chul-Hi Han "New uncooled thermal IR detector using silicon-diode-micromachined isolated silicon diode for IR detection (MISIR)", Proc. SPIE 4130, Infrared Technology and Applications XXVI, (15 December 2000); https://doi.org/10.1117/12.409846
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KEYWORDS
Diodes
Silicon
Infrared detection
Infrared detectors
Electrochemical etching
Lithium
Etching
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