Electronic traps in OLED transport layers: influence of doping and accelerated aging

Juergen Steiger; Siegfried Karg; Heinz von Seggern

doi:10.1117/12.416902

2 February 2001 Electronic traps in OLED transport layers: influence of doping and accelerated aging

Juergen Steiger, Siegfried Karg, Heinz von Seggern

Author Affiliations +

Proceedings Volume 4105, Organic Light-Emitting Materials and Devices IV; (2001) https://doi.org/10.1117/12.416902
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

The methods of thermally stimulated currents (TSC) and thermally stimulated luminescence (TSL) were employed to reveal the trap structure of the most prominent organic semiconductors materials such as tris-8-(hydroxyquinoline) (Alq₃), N-N'-di(1-naphtyl)-N-N'-diphenylbenzidine ((alpha) -NPD), and 4,4',4'-tris-(N-2-naphtyl)-N-phenylamino- triphenylamine (1-Naph-DATA). The energetic trap depths and a lower limit of the trap densities were derived for all investigated materials by means of the initial-rise method and curve fitting techniques. Typical activation energies range between 0.1 and 0.6 eV and trap concentrations differ between 10¹⁴ and 10¹⁷ cm^-3. Most materials exhibit trap levels with a single activation energy, however, in Alq₃ a brought distribution of trap depths will be reported. In addition, the polarity of the dominant trap levels was determined by a comparison of TSC spectra from optically and electrically filled traps. Besides the trap detection and characterization the effect of doping and accelerated aging on the trap structure will be shown. TSC and TSL results on rubrene doped Alq₃ reveals a characteristic shift in the trap depth indicating new rubrene related trapping site. The effect of aging on the trap structure of organic semiconductors in 'potentially harmful' atmospheres such as oxygen and humidity and their correlation to I-V characteristics will also be reported.

Citation Download Citation

Juergen Steiger, Siegfried Karg, and Heinz von Seggern "Electronic traps in OLED transport layers: influence of doping and accelerated aging", Proc. SPIE 4105, Organic Light-Emitting Materials and Devices IV, (2 February 2001); https://doi.org/10.1117/12.416902

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE