Fast-scanning ellipsometry for thin film characterization

Christopher Berge; Anna Krasilnikova; Enrico Masetti

doi:10.1117/12.405833

2 November 2000 Fast-scanning ellipsometry for thin film characterization

Christopher Berge, Anna Krasilnikova, Enrico Masetti

Proceedings Volume 4099, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries; (2000) https://doi.org/10.1117/12.405833
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

We present an ellipsometric measurement set up designed for fast surface mapping. The system consists of a HeNE laser, a linear polarizer, a recently developed grating polarimeter and a translation stage for moving the sample. The system allows the spatially resolved measurement of the ellipsometric angles (Delta) and (Psi) . For transparent single layer coating, refractive index and film thickness from the measured values can be calculated. For multilayer coatings where the determination of all the optical properties is not possible, information on the coating homogeneity can be gained.

Citation Download Citation

Christopher Berge, Anna Krasilnikova, and Enrico Masetti "Fast-scanning ellipsometry for thin film characterization", Proc. SPIE 4099, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries, (2 November 2000); https://doi.org/10.1117/12.405833

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