Paper
29 November 2000 Simulation study of multiple acceptable models existing in the interpretation of ellipsometric data
Wensheng Guo
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408328
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
Ellipsometry has been widely used in the measurements of thin film thickness and optical properties. The existence of multiple acceptable models has been confirmed in the interpretation of the measured ellipsometric data, which can degrade the measurement accuracy. How to eliminate this ambiguity is very important. In the present paper, we apply a simulation method to study the existence of multiple acceptable models and to seek the methods to alleviate such kinds of ambiguity. In the simulation study, a simple structure model (silicon dioxide film coated on silicon substrate) is used.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wensheng Guo "Simulation study of multiple acceptable models existing in the interpretation of ellipsometric data", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408328
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KEYWORDS
Data modeling

Error analysis

Silicon

Statistical modeling

Ellipsometry

Refractive index

Radon

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