Paper
29 November 2000 Excitons in InSb quantum wells: a multiuse tool
N. Dai, F. Brown, G. A. Khodaparast, Ryan E. Doezema, S. J. Chung, M. B. Santos
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408459
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
We use exciton signatures in optical absorption spectra to probe material and structural properties of InSb/AlxIn1-xSb multiple quantum wells. Excitonic transition lines have been observed up to room temperature for the system in which exciton binding energy is only 1 meV largely due to very weak LO-phonon-electron coupling. Parabolically graded quantum wells were grown and used to study the band offset ratio at the InSb/AlxIn1-xSb heterointerface. A 0.62 +/- 0.04 offset ratio is extracted from the exciton transitions measured on samples with Al concentrations in the range 2% to 12%. Furthermore, deformation potentials in the system have been studied. The hydrostatic and the shear deformation potentials are determined simultaneously to be around -6.5 +/- 0.3 and -1.5 +/- 0.2, respectively.
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N. Dai, F. Brown, G. A. Khodaparast, Ryan E. Doezema, S. J. Chung, and M. B. Santos "Excitons in InSb quantum wells: a multiuse tool", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408459
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KEYWORDS
Excitons

Quantum wells

Aluminum

Absorption

Phonons

Scattering

Semiconductors

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