Deposition of GaN Films on (111)GaAs substrates

Qixin Guo; Akira Okada; Mitsuhiro Nishio; Hiroshi Ogawa

doi:10.1117/12.408310

29 November 2000 Deposition of GaN Films on (111)GaAs substrates

Qixin Guo, Akira Okada, Mitsuhiro Nishio, Hiroshi Ogawa

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408310
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

GaN films were grown on (111)GaAs substrates by radio frequency magnetron sputtering in an ambient of argon and nitrogen, using gallium target. The structural properties of the GaN films were investigated by conventional (theta) - 2(theta) x-ray diffraction, high-resolution (omega) rocking curve and rotary phi scan. Crystalline wurtzite GaN films were obtained on (111)GaAs at substrate temperatures between 600 and 700 degree(s)C. The crystal quality of the GaN films was examined as a function of nitrogen content in sputtering gas and the best value of full width at half-maximum of rocking curve for the (0002)GaN was obtained at 880% nitrogen content in the investigated regions.

Citation Download Citation

Qixin Guo, Akira Okada, Mitsuhiro Nishio, and Hiroshi Ogawa "Deposition of GaN Films on (111)GaAs substrates", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408310

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