Paper
19 July 2000 Phase defects on DUV alternating PSMs
Ikuo Yoneda, Hideki Kanai, Shinji Yamaguchi, Iwao Higashikawa
Author Affiliations +
Abstract
To extend the life of photolithography, it has been proceeded the development of the strong PSMs which has no printing 'phase shifter' defects. At PMJ '98 a defect inspection algorithm for phase shifter defects of 60 degrees on i-line multi-phase alternating PSMs was discussed. At BACUS '99, a defect printability and inspection sensitivity of multi-phase shifter defect for KrF exposure had also discussed. It was reported that the inspection tool combing \9MD84SR and STARlight had enough sensitivity for quartz bump defect that caused +/- 10 percent CD-error on 150nm L and S pattern. But, the delay of ArF exposure tool and process required DUV low-k1-lithography for next generation devices. And the, we tried to evaluate defects printability and inspection sensitivity for Logic-Gate pattern mask, that lien width is narrower than the line width evaluated by precede researchers.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ikuo Yoneda, Hideki Kanai, Shinji Yamaguchi, and Iwao Higashikawa "Phase defects on DUV alternating PSMs", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392097
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Cited by 1 scholarly publication.
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KEYWORDS
Inspection

Defect inspection

Phase shifts

Photomasks

Deep ultraviolet

Defect detection

Quartz

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