Paper
19 July 2000 In-line verification of linewidth uniformity for 0.18 and below: design rule reticles
TaiSheng Tan, Shen Chung Kuo, Clare Wu, Reuven Falah, Shirley Hemar, Amikam Sade, Gidon Gottlib
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Abstract
Mask making process development and control is addressed using a reticle inspection tool equipped with the new revolutionized application called LBM-Linewidth Bias Monitoring. In order to use the LBM for mask-making process control, procedures and corresponding test plates are a developed, such that routine monitoring of the manufacturing process discloses process variation and machine variation. At the same time systematic variation are studied and either taken care of or taken into consideration to allow successful production line work. In this paper the contribution of the LBM for mask quality monitoring is studied with respect to dense layers, e.g. DRAM. Another aspect of this application - the detection of very small CD mis-uniformity areas is discussed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
TaiSheng Tan, Shen Chung Kuo, Clare Wu, Reuven Falah, Shirley Hemar, Amikam Sade, and Gidon Gottlib "In-line verification of linewidth uniformity for 0.18 and below: design rule reticles", Proc. SPIE 4066, Photomask and Next-Generation Lithography Mask Technology VII, (19 July 2000); https://doi.org/10.1117/12.392035
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Reticles

Critical dimension metrology

Photomasks

Inspection

Process control

Lithography

Mask making

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