Paper
14 December 1999 Electrical properties of some plasma polymers obtained by remote microwave plasma chemical vapor deposition
M. Wlodarska, E. Staryga, A. Walkiewicz-Pietrzykowska, Grzegorz W. Bak, M. Buczkowska, A. Wrobel
Author Affiliations +
Proceedings Volume 4017, Polymers and Liquid Crystals; (1999) https://doi.org/10.1117/12.373689
Event: International Conference on Dielectric and Related Phenomena '98, 1998, Szczyrk, Poland
Abstract
Some electrical properties of amorphous hydrogenated silicon-carbon films produced by remote microwave hydrogen plasma chemical vapor deposition technique are discussed. The DC conduction of Al/a-Si:C:H/Au and Al/a-Si:C:H/n-Si structures has been measured. Dielectric response of these structures has also been examined. The films are weakly conducting materials with the activation energy of the conductivity equal to 0.28 eV and 0.03 eV and 0.03 eV. MIS structures containing the amorphous silicon-carbon films as an insulator show the influence of trapping phenomena at the insulator-silicon interface.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Wlodarska, E. Staryga, A. Walkiewicz-Pietrzykowska, Grzegorz W. Bak, M. Buczkowska, and A. Wrobel "Electrical properties of some plasma polymers obtained by remote microwave plasma chemical vapor deposition", Proc. SPIE 4017, Polymers and Liquid Crystals, (14 December 1999); https://doi.org/10.1117/12.373689
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KEYWORDS
Plasma

Polymers

Capacitance

Dielectrics

Chemical vapor deposition

Silicon

Microwave radiation

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