Paper
20 June 2000 Design and assembly of a stressed Ge:Ga photoconductor array for AIRES
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Abstract
In this paper we present the considerations for design and assembly of a stressed gallium doped germanium photoconductor array for the Airborne InfraRed Echelle Spectrometer on SOFIA. This 8 X 12 element array will cover the wavelength range from 125 to 210 micrometers . The considerations cover the aspects of the mechanical design for stressing the detectors in a uniform way, assembly of the components, contacting them electrically with minimized stray capacitance, and the layout of the light collecting cone assembly.
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David Rabanus, Jessie L. Dotson, Edwin F. Erickson, and Juergen Wolf "Design and assembly of a stressed Ge:Ga photoconductor array for AIRES", Proc. SPIE 4014, Airborne Telescope Systems, (20 June 2000); https://doi.org/10.1117/12.389095
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KEYWORDS
Sensors

Resistance

Crystals

Signal detection

Capacitance

Far infrared

Photoresistors

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