Practical optical-proximity-correction approach by considering interlayer overlap

Byoung-Il Choi; Andrew Khoh

doi:10.1117/12.389022

5 July 2000 Practical optical-proximity-correction approach by considering interlayer overlap

Byoung-Il Choi, Andrew Khoh

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.389022
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Pattern fidelity has always been the key consideration in optical proximity corrections. However, it is equally important that overlap of underlying or overlying contact or via meets the requirements given in design rules. The normal OPC approach of minimizing the edge placement error with respect to the corresponding mask patterns may not give sufficient overlap over contact and via. A new OPC approach is proposed. The new approach considers tow parameters for optimization - edge placement errors of printed edge with respect to corresponding mask patterns, and overlap of the layer over contact and/or via. An evaluation is done by applying OPC, with normal approach and with the new OPC, to metal 1 of a 64M SRAM cell. Pattern fidelity of metal 1 and overlap of metal 1 over contact and via are compared. Results show that the new OPC approach gives both good pattern fidelity and improved overlap over contact and via. The only drawback is the significantly higher run time, due largely to the printing of resist images for overlap analysis.

Citation Download Citation

Byoung-Il Choi and Andrew Khoh "Practical optical-proximity-correction approach by considering interlayer overlap", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389022

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