Design and synthesis of new photoresist materials for ArF lithography

Sang-Jun Choi; Hyun-Woo Kim; Sang-Gyun Woo; Joo-Tae Moon

doi:10.1117/12.388333

23 June 2000 Design and synthesis of new photoresist materials for ArF lithography

Sang-Jun Choi, Hyun-Woo Kim, Sang-Gyun Woo, Joo-Tae Moon

Proceedings Volume 3999, Advances in Resist Technology and Processing XVII; (2000) https://doi.org/10.1117/12.388333
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

A new class of photoresist matrix polymers based on vinyl ether-maleic anhydride (VEMA) alternating copolymers were developed for ArF single-layer lithography. These polymers were synthesized by copolymerization of alkyl vinyl ether- maleic anhydride alternating copolymers and acrylate derivatives with bulky alicyclic acid-labile protecting groups. They showed a good controllability of polymerization and high transmittance. Also, these resists showed a good adhesion to the substrate, high dry-etching resistance against CF₄ mixture gas (1.02 times the etching rate of DUV resist) and high selectivity to silicon oxide etching. Using an ArF excimer laser exposure system with 0.6 NA, 120 nm L/S patterns have been resolved under conventional illumination.

Citation Download Citation

Sang-Jun Choi, Hyun-Woo Kim, Sang-Gyun Woo, and Joo-Tae Moon "Design and synthesis of new photoresist materials for ArF lithography", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388333

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