Paper
23 June 2000 193-nm positive-tone bilayer resist based on norbornene-maleic anhydride copolymers
Ratnam Sooriyakumaran, Debra Fenzel-Alexander, Phillip J. Brock, Carl E. Larson, Richard A. Di Pietro, Gregory M. Wallraff, Donald C. Hofer, Dan J. Dawson, Arpan P. Mahorowala, Marie Angelopoulos
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Abstract
We have designed and developed a high resolution 193 nm bilayer resist system based on alternating copolymers of silane substituted norbornene and maleic anhydride. We have utilized a combination of acid labile silane functionalities and acid stable silicon groups in this resist development.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ratnam Sooriyakumaran, Debra Fenzel-Alexander, Phillip J. Brock, Carl E. Larson, Richard A. Di Pietro, Gregory M. Wallraff, Donald C. Hofer, Dan J. Dawson, Arpan P. Mahorowala, and Marie Angelopoulos "193-nm positive-tone bilayer resist based on norbornene-maleic anhydride copolymers", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388282
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CITATIONS
Cited by 3 scholarly publications and 1 patent.
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KEYWORDS
Polymers

Silicon

Lithography

Etching

Absorbance

Image processing

Silicon films

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