Process control and optimization of conventional metal process for 0.18-micron logic technology

Ramkumar Subramanian; Stuart E. Brown; Susan H. Chen; Carmen Morales; Ernesto Gallardo; Bhanwar Singh

doi:10.1117/12.386470

2 June 2000 Process control and optimization of conventional metal process for 0.18-micron logic technology

Ramkumar Subramanian, Stuart E. Brown, Susan H. Chen, Carmen Morales, Ernesto Gallardo, Bhanwar Singh

Proceedings Volume 3998, Metrology, Inspection, and Process Control for Microlithography XIV; (2000) https://doi.org/10.1117/12.386470
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

In this paper we describe the process control and optimization strategy for a conventional metal process for 0.18-micrometer technology. It is well known that the interaction of DUV resists with substrates containing nitrogen, e.g. TiN, leads to resist footing. A technique to minimize this interaction and improve CD control will be presented. We then present process optimization strategies including substrate optimization, resist thickness optimization, and use of top- anti-reflective coating. A comparison of reflectivity simulations with CD control will also be shown. DOF with varying substrate thicknesses will be presented. Strategies for CD control in sub-0.18 micrometer metal patterning will also be presented.

Citation Download Citation

Ramkumar Subramanian, Stuart E. Brown, Susan H. Chen, Carmen Morales, Ernesto Gallardo, and Bhanwar Singh "Process control and optimization of conventional metal process for 0.18-micron logic technology", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386470

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