Pitch-dependent intrafield dimensional offsets in advanced lithography

Christine Wallace; Brian Martin; Graham G. Arthur

doi:10.1117/12.386519

2 June 2000 Pitch-dependent intrafield dimensional offsets in advanced lithography

Christine Wallace, Brian Martin, Graham G. Arthur

Proceedings Volume 3998, Metrology, Inspection, and Process Control for Microlithography XIV; (2000) https://doi.org/10.1117/12.386519
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

The variation of dimensional control between center and edge of a stepper lens field is measured both practically and by lithography simulation for both lines and slots at various pitches. Results for lines show that the sign of the center- edge offset is pitch dependent but for slots the dimension is always larger at center field irrespective of pitch.

Citation Download Citation

Christine Wallace, Brian Martin, and Graham G. Arthur "Pitch-dependent intrafield dimensional offsets in advanced lithography", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386519

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