FIB metrology in advanced lithography

Drew Barnes; Christian R. Musil; Don E. Yansen

doi:10.1117/12.386504

2 June 2000 FIB metrology in advanced lithography

Drew Barnes, Christian R. Musil, Don E. Yansen

Proceedings Volume 3998, Metrology, Inspection, and Process Control for Microlithography XIV; (2000) https://doi.org/10.1117/12.386504
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

We present the results of a DARPA sponsored study on the application of Focused Ion Beam (FIB) systems to metrology in advanced lithography for production and process development. Data on top-down measurements, on the effects of FIB imaging, and on milling strategies for cross-sectional preparation are presented for fine-line resist structures. In addition, some preliminary aspects of Ga contamination are addressed in the context of the residual dose and concentration leftover from FIB processing. A standard deviation of 8 nm for the measured line width was observed, which makes FIB metrology competitive with the more established technique of CD SEM analysis.

Citation Download Citation

Drew Barnes, Christian R. Musil, and Don E. Yansen "FIB metrology in advanced lithography", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386504

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