Paper
2 June 2000 Application of optical proximity correction in manufacturing and its effect on process control
Christine Wallace, Claire Duncan, Brian Martin
Author Affiliations +
Abstract
Optical proximity correction in terms of linewidth correction at different pitches is used to demonstrate improvement in critical dimension control at the polysilicon layer of a sub- half-micron CMOS process. Further measurements across the image field show the effect on wafer linewidth distributions of different generations of the laser write tool used in reticle manufacturing.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christine Wallace, Claire Duncan, and Brian Martin "Application of optical proximity correction in manufacturing and its effect on process control", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386521
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KEYWORDS
Reticles

Optical proximity correction

Semiconducting wafers

Manufacturing

Process control

Lithography

Optics manufacturing

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