Paper
21 July 2000 Optimization of DUV chemically amplified resist platforms for SCALPEL e-beam exposure
Leonidas E. Ocola, Myrtle I. Blakey, Paul A. Orphanos, Wai-Yi Li, Anthony E. Novembre, Robert L. Brainard, Joseph F. Mackevich, Gary N. Taylor
Author Affiliations +
Abstract
Optimization of phenolic chemically amplified resist platforms has lead to the development of new resists, capable of high throughput SCALPEL exposure. A positive resist, XP9947A, has exhibited 100 nm and 80 nm dense line resolution with good sensitivity and dose latitude. The influence of DUV absorption and 100 KV e-beam absorption to the optimization process is discussed. The nature of 100 KV e-beam absorption enables a greater freedom of resist design than encountered for DUV resists.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leonidas E. Ocola, Myrtle I. Blakey, Paul A. Orphanos, Wai-Yi Li, Anthony E. Novembre, Robert L. Brainard, Joseph F. Mackevich, and Gary N. Taylor "Optimization of DUV chemically amplified resist platforms for SCALPEL e-beam exposure", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390055
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Charged-particle lithography

Deep ultraviolet

Monte Carlo methods

Absorption

Electrons

Polymers

Chemically amplified resists

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