Microscopic model of impact ionization in AlxGa1-xSb

Christoph H. Grein; Henry Ehrenreich

doi:10.1117/12.382120

13 April 2000 Microscopic model of impact ionization in Al_xGa_1-xSb

Christoph H. Grein, Henry Ehrenreich

Author Affiliations +

Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382120
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

The impact ionization rates and coefficients are computed for Al_xGa_1-xSb avalanche photodiodes with alloy compositions near the resonance between the energy gap and the spin-orbit splitting. Realistic psuedopotential band structures and wavefunctions including spin-orbit corrections are employed to evaluate the electron and hole initiated impact ionization rates. We address seemingly contradictory experimental data regarding the presence of an enhancement in the hole to electron impact ionization coefficient ratio near the resonance between the energy gap and the spin-orbit splitting. The hole to electron impact ionization coefficient ratio shows no enhancement at high electric fields. However, an enhancement due to the resonance in the band structure is predicted for weak fields.

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Christoph H. Grein and Henry Ehrenreich "Microscopic model of impact ionization in Al_xGa_1-xSb", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); https://doi.org/10.1117/12.382120

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