GaN photodiodes grown by MBE on HVPE and ELO-HVPE GaN\sapphire substrates

Anand V. Sampath; E. Iliopoulos; K. Seth; Y. Fedyunin; Mira Misra; HockMin Ng; Phil Lamarre; Ze'ev Feit; Theodore D. Moustakas

doi:10.1117/12.382132

13 April 2000 GaN photodiodes grown by MBE on HVPE and ELO-HVPE GaN\sapphire substrates

Anand V. Sampath, E. Iliopoulos, K. Seth, Y. Fedyunin, Mira Misra, HockMin Ng, Phil Lamarre, Ze'ev Feit, Theodore D. Moustakas

Author Affiliations +

Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382132
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

In this paper, we report on the growth by molecular beam epitaxy (MBE), the fabrication and the characterization of GaN diodes on HVPE n⁺-GaN/sapphire and ELO-HVPE n⁺-GaN/sapphire substrates. Specifically, such diodes were fabricated in the form of vertical schottky diodes or p-n junctions. In both cases we have seen a dramatic decrease in the leakage current in the reverse direction which is consistent with the reduction of threading dislocations in the active area of the device. The lowest leakage current measured at -5 V bias was approximately 10^-8 A/cm² for p-n junctions grown on ELO-HVPE n⁺-GaN/sapphire substrates. The spectral response of the vertical schottky diodes were evaluated and compared to similar devices grown wholely by MBE on sapphire substrates. The device grown on HVPE n⁺-GaN/sapphire substrate shows nearly ideal responsivity below 355 nm but also poorer visible light rejection than the fully grown MBE device. The observed exponential tail in the spectral response of the vertical schottky grown on the HVPE n⁺-GaN/sapphire substrate is attributed to the absorption and collection in the thick n⁺ GaN substrate.

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Anand V. Sampath, E. Iliopoulos, K. Seth, Y. Fedyunin, Mira Misra, HockMin Ng, Phil Lamarre, Ze'ev Feit, and Theodore D. Moustakas "GaN photodiodes grown by MBE on HVPE and ELO-HVPE GaN\sapphire substrates", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); https://doi.org/10.1117/12.382132

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