Paper
18 April 2000 High-brightness tapered laser sources in the 1.3- to 2.0-μm wavelength range
James N. Walpole, Joseph P. Donnelly, H. K. Choi, Zong-Long Liau, Leo J. Missaggia, Robert J. Bailey, Steven H. Groves, George W. Turner, Patrick J. Taylor, Vincento Daneu
Author Affiliations +
Abstract
Recent progress in tapered high-brightness lasers emitting in the near infrared region from 1.3 to 2.0 micrometers is reviewed. Improved power and beam quality are obtained for tapered lasers operating near 1.55 micrometers using Gaussian distributed lateral carrier injection profiles. Results for high-brightness 9-element arrays of tapered lasers emitting near 2.0 micrometers are included. Also included is a discussion of the use of mass-transported microlenses for collimating the output of the astigmatic tapered devices and coupling them into optical fibers.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James N. Walpole, Joseph P. Donnelly, H. K. Choi, Zong-Long Liau, Leo J. Missaggia, Robert J. Bailey, Steven H. Groves, George W. Turner, Patrick J. Taylor, and Vincento Daneu "High-brightness tapered laser sources in the 1.3- to 2.0-μm wavelength range", Proc. SPIE 3947, In-Plane Semiconductor Lasers IV, (18 April 2000); https://doi.org/10.1117/12.382105
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KEYWORDS
Laser vision correction

Copper

Laser countermeasures

Microlens

Near field

Semiconducting wafers

Semiconductor lasers

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