Cooperative spontaneous emission of excitons in the semiconductor microcavity

Shi'an Liu; Shiming Lim; Qiming Wang

doi:10.1117/12.384370

1 May 2000 Cooperative spontaneous emission of excitons in the semiconductor microcavity

Shi'an Liu, Shiming Lim, Qiming Wang

Proceedings Volume 3946, Vertical-Cavity Surface-Emitting Lasers IV; (2000) https://doi.org/10.1117/12.384370
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

We have studied the spontaneous emission of polarized excitons in the GaInP/AlGaInP VCSEL from 30 K to room temperature. It is observed that the spontaneous emission peak enters and leaves the resonant regime. At the resonant regime, the emission intensities of the perpendicular and horizontal polarized exciton are enhanced at different ratio to those in non-resonant regime. These experiment results are explained through the dressed exciton theory of the semiconductor microcavity device. From this theory, the intensity enhancement and the polarization dependence are understood as cooperative emission and the microcavity anisotropy.

Citation Download Citation

Shi'an Liu, Shiming Lim, and Qiming Wang "Cooperative spontaneous emission of excitons in the semiconductor microcavity", Proc. SPIE 3946, Vertical-Cavity Surface-Emitting Lasers IV, (1 May 2000); https://doi.org/10.1117/12.384370

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available