A Focused Ion Beam System For The Generation Of Submicron Patterns

J. A. Doherty; M. F. Steyer

doi:10.1117/12.935106

7 November 1983 A Focused Ion Beam System For The Generation Of Submicron Patterns

J. A. Doherty, M. F. Steyer

Proceedings Volume 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II; (1983) https://doi.org/10.1117/12.935106
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

Focused ion beams constitute an important emerging technology that has many significant advantages for the fabrication of submicron ICs. These advantages are described vis-a-vis the currently dominant methods of pattern generation and transfer. A commercial focused ion beam system is outlined in the context of major design considerations. Probable FIB applications are also discussed.

Citation Download Citation

J. A. Doherty and M. F. Steyer "A Focused Ion Beam System For The Generation Of Submicron Patterns", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); https://doi.org/10.1117/12.935106

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