Semiconductor detectors for the erytheme region of UV radiation

V. P. Makhniy; Leonid P. Gal'chinetsky; Vladimir D. Ryzhikov

doi:10.1117/12.370468

18 November 1999 Semiconductor detectors for the erytheme region of UV radiation

V. P. Makhniy, Leonid P. Gal'chinetsky, Vladimir D. Ryzhikov

Proceedings Volume 3904, Fourth International Conference on Correlation Optics; (1999) https://doi.org/10.1117/12.370468
Event: International Conference on Correlation Optics, 1999, Chernivsti, Ukraine

Abstract

Main parameters and characteristics of surface-barrier diodes sensitive for UV irradiation on the base of ZnSe are presented in the given paper. Possibilities of application of developed semiconductor photoreceivers for detectors of erytheme region are being discussed.

Citation Download Citation

V. P. Makhniy, Leonid P. Gal'chinetsky, and Vladimir D. Ryzhikov "Semiconductor detectors for the erytheme region of UV radiation", Proc. SPIE 3904, Fourth International Conference on Correlation Optics, (18 November 1999); https://doi.org/10.1117/12.370468

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