Optoelectronic properties of new amorphous silicon photoreceptor

Jung Chuan Chou; Hsu Ying Yang

doi:10.1117/12.370375

12 November 1999 Optoelectronic properties of new amorphous silicon photoreceptor

Jung Chuan Chou, Hsu Ying Yang

Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370375
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

A new highly sensitive photoreceptor in visible-spectrum region with high contrast voltage ratio has been developed for an electrophotographic device. The multilayered amorphous silicon photoreceptor has been prepared with PE- LPCVD and sputtering system. The structure of the photoreceptor consists of four part: (a) Al substrate, (b) a-WO₃ blocking layer, (c) a-Si:H(i) photogeneration and transport layer, (d) a-C:H surface protecting layer. In this study, the photoreceptor is exposed with different wavelength and illumination. Keithley 236 Semiconductor Parameter Analyzer is used to measure the current-voltage curves of photoreceptor. In addition, Electrostatic Parameter Analyzer is used to measure the photo-induced discharge curves, which is used to simulate the processes of copying machines. According to the I-V curves and PID curves, we can investigate the transport of photocarrier in photoreceptor and the optoelectronic parameters.

Citation Download Citation

Jung Chuan Chou and Hsu Ying Yang "Optoelectronic properties of new amorphous silicon photoreceptor", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); https://doi.org/10.1117/12.370375

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