Modeling HEMT intermodulation distortion characteristics

Guoli Qu; Anthony E. Parker

doi:10.1117/12.368448

8 October 1999 Modeling HEMT intermodulation distortion characteristics

Guoli Qu, Anthony E. Parker

Proceedings Volume 3893, Design, Characterization, and Packaging for MEMS and Microelectronics; (1999) https://doi.org/10.1117/12.368448
Event: Asia Pacific Symposium on Microelectronics and MEMS, 1999, Gold Coast, Australia

Abstract

The significance of the nonlinearity of HEMT capacitance models to the prediction of intermodulation is investigated. Three capacitance models, one linear and two with contrasting nonlinear behavior, are shown to exhibited almost identical performance. It is concluded that the nonlinearity of the low-frequency model is the dominant distortion generating component. Development of capacitance models with accurate high-order derivatives is unwarranted without an accurate dc model. Therefore, careful characterization of the drain current description is most important for successful circuit simulation.

Citation Download Citation

Guoli Qu and Anthony E. Parker "Modeling HEMT intermodulation distortion characteristics", Proc. SPIE 3893, Design, Characterization, and Packaging for MEMS and Microelectronics, (8 October 1999); https://doi.org/10.1117/12.368448

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