Using the surface charge profiler for in-line monitoring of doping concentration in silicon epitaxial wafer manufacturing

Joshua P. Tower; Emil Kamieniecki; M. C. Nguyen; Adrien Danel

doi:10.1117/12.361332

27 August 1999 Using the surface charge profiler for in-line monitoring of doping concentration in silicon epitaxial wafer manufacturing

Joshua P. Tower, Emil Kamieniecki, M. C. Nguyen, Adrien Danel

Author Affiliations +

Proceedings Volume 3884, In-Line Methods and Monitors for Process and Yield Improvement; (1999) https://doi.org/10.1117/12.361332
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

The Surface Charge Profiler (SCP) has been introduced for monitoring and development of silicon epitaxial processes. The SCP measures the near-surface doping concentration and offers advantages that lead to yield enhancement in several ways. First, non-destructive measurement technology enables in-line process monitoring, eliminating the need to sacrifice production wafers for resistivity measurements. Additionally, the full-wafer mapping capability helps in development of improved epitaxial growth processes and early detection of reactor problems. As examples, we present the use of SCP to study the effects of susceptor degradation in barrel reactors and to study autodoping for development of improved dopant uniformity.

Citation Download Citation

Joshua P. Tower, Emil Kamieniecki, M. C. Nguyen, and Adrien Danel "Using the surface charge profiler for in-line monitoring of doping concentration in silicon epitaxial wafer manufacturing", Proc. SPIE 3884, In-Line Methods and Monitors for Process and Yield Improvement, (27 August 1999); https://doi.org/10.1117/12.361332

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