Integrated IMP Ti and MOCVD TiN for 300-mm W barrier and liner for sub-0.18-um IC processing

Anish Tolia; Marlon Menezes; Jason Li; Michael Jackson; Vikram Pavate; Nitin Khurana; Rod Mosely; Murali K. Narasimhan; Mei Chang; Fusen E. Chen

doi:10.1117/12.360580

11 August 1999 Integrated IMP Ti and MOCVD TiN for 300-mm W barrier and liner for sub-0.18-μm IC processing

Anish Tolia, Marlon Menezes, Jason Li, Michael Jackson, Vikram Pavate, Nitin Khurana, Rod Mosely, Murali K. Narasimhan, Mei Chang, Fusen E. Chen

Author Affiliations +

Proceedings Volume 3883, Multilevel Interconnect Technology III; (1999) https://doi.org/10.1117/12.360580
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

The combination of IMP Ti and CVD TiN is well established for use as W-adhesion films for 200 mm wafers. The advantage of this unique PVD/CVD integrated solution provides the superior Ti bottom coverage by IMP Ti and conformal TiN coverage from MOCVD TiN. A 300 mm liner and barrier system with integrated IMP Ti, MOCVD TiN has also been developed on Endura mainframe. Scale-up to 300 mm poses several unique challenges to both CVD and PVD processes. Additionally, since 300 mm processing will likely be implemented at sub 0.18 micrometers mode, ultra-thin liners will be required for superior device performance. This paper discusses the process characterization of the 300 mm IMP Ti and MOCVD TiN for thin films (<200 A Ti and <100 A TiN). The Rs and Rs uniformity of 300 mm IMP Ti and CVD TiN were shown to be comparable with the results achieved for 200 mm. Laser acoustic wave spectrometry measurement of thickness and thickness uniformity of ultra-thin Ti (50 A) and TiN (50 A) will also be presented. Cross sectional TEM study shows superior Ti bottom coverage and conformal TiN coverage were also achieved with the integrated 300 mm IMP Ti/CVD TiN process. Process stability was demonstrated with 250-wafer run. The process results of 300 mm Ar sputtering preclean and degas will also be presented in the paper.

Citation Download Citation

Anish Tolia, Marlon Menezes, Jason Li, Michael Jackson, Vikram Pavate, Nitin Khurana, Rod Mosely, Murali K. Narasimhan, Mei Chang, and Fusen E. Chen "Integrated IMP Ti and MOCVD TiN for 300-mm W barrier and liner for sub-0.18-μm IC processing", Proc. SPIE 3883, Multilevel Interconnect Technology III, (11 August 1999); https://doi.org/10.1117/12.360580

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