Crystallization process in thin films of GeSbTe

Chubing Peng; Masud Mansuripur

doi:10.1117/12.997651

28 June 1999 Crystallization process in thin films of GeSbTe

Chubing Peng, Masud Mansuripur

Author Affiliations +

Proceedings Volume 3864, Joint International Symposium on Optical Memory and Optical Data Storage 1999; 38641T (1999) https://doi.org/10.1117/12.997651
Event: Optical Data Storage, 1999, Kauai, HI, United States

Abstract

Phase-change (PC) rewritable optical recording uses a focused laser beam to reversibly switch a submicron-sized area of a thin chalcogenide film between its amorphous and crystalline states. Information is generally stored in these media in the form of melt-quenched amorphous marks on a crystalline background.

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Chubing Peng and Masud Mansuripur "Crystallization process in thin films of GeSbTe", Proc. SPIE 3864, Joint International Symposium on Optical Memory and Optical Data Storage 1999, 38641T (28 June 1999); https://doi.org/10.1117/12.997651

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