Paper
2 July 1999 Laser scanning semiconductor panels and their use in IR and millimeter-wave radar
Aref Bakhtazad, Mohammad H. Rahnavard, Mehrdad Zomorrodi
Author Affiliations +
Abstract
A method of conversion of millimeter wave images to visual displays is the use of semiconductor panel under scanning light spot. In this method of conversion, the behavior of semiconductor panel under moving spot of light is important. Performance of this system has been under investigation for last three decades. In this paper excess millimeter wave attenuation through semiconductor panel, due to moving rectangular illuminated spot, with arbitrary intensity profile across the length of the spot is formulated. Numerical calculation is done, for uniform and linearly graded cases. Effects of scanning velocity and spot dimensions on the excess millimeter wave attenuation are considered. It is shown that, with proper choice of parameters, higher system resolution is attainable with linearly graded intensity.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aref Bakhtazad, Mohammad H. Rahnavard, and Mehrdad Zomorrodi "Laser scanning semiconductor panels and their use in IR and millimeter-wave radar", Proc. SPIE 3787, Optical Scanning: Design and Application, (2 July 1999); https://doi.org/10.1117/12.351651
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KEYWORDS
Signal attenuation

Semiconductors

Extremely high frequency

Diffusion

Radar

Laser scanners

Semiconductor lasers

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