Paper
15 November 1999 Optics study of the MMRL system
Vinh V. Ngo, Ka-Ngo Leung
Author Affiliations +
Abstract
A novel IPL technique called Maskless Micro-ion-beam Reduction lithography (MMRL) is being studied for future DRAMs and microprocessors manufacturing. In addition extendible minimum feature sizes to 50 nm or less, required of next generation lithography (NLG) candidates, this MMRL system can completely eliminate the first stage of the conventional IPL system that contains the complicated beam optics design in front of the stencil mask and the mask itself. Its main components consist of a multicusp RF plasma generator, a multi-beamlet extraction system, and an accelerator column for beam reduction. The viability of this MMRL system hinges upon the successful development of these components, most importantly the proposed all-electrostatic accelerator column. This paper describes the different components of the MMRL system and its ion optics. Computational results of beam demagnification and optics optimization are also presented along with design progress of the prototype MMRL system.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vinh V. Ngo and Ka-Ngo Leung "Optics study of the MMRL system", Proc. SPIE 3777, Charged Particle Optics IV, (15 November 1999); https://doi.org/10.1117/12.370126
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Cited by 1 scholarly publication.
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KEYWORDS
Ions

Beam shaping

Monochromatic aberrations

Distortion

Semiconducting wafers

Electrodes

Chromatic aberrations

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