Paper
21 October 1999 XUV laser reflectometry for optical constant determination
Author Affiliations +
Abstract
We report the measurement of the optical constants of Si, GaP, InP, GaAs, GaAsP and Ir at a wavelength of 46.9 nm (26.5 eV). The optical constants were obtained from the measurement of the variation of the reflectivity as a function of angle utilizing, as an illumination source, a discharge pumped 46.9 nm table-top laser operated at a repetition rate of 1 Hz. These measurements constitute the first application of an ultrashort wavelength laser to materials research.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Igor A. Artioukov, Brady R. Benware, Jorge J. G. Rocca, Matt Forsythe, Yurii A. Uspenskii, and Alexander V. Vinogradov "XUV laser reflectometry for optical constant determination", Proc. SPIE 3776, Soft X-Ray Lasers and Applications III, (21 October 1999); https://doi.org/10.1117/12.366672
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Reflectivity

Silicon

Extreme ultraviolet

Reflection

Solids

Gallium arsenide

Data modeling

RELATED CONTENT

Cavity Radiometer Reflectance
Proceedings of SPIE (November 15 1979)
High-NA swing curve effects
Proceedings of SPIE (September 14 2001)
Advanced at-wavelength reflectometry with the EUV tube
Proceedings of SPIE (March 24 2006)

Back to Top