Characterization of silicon photodiode detectors with multilayer filter coatings for 17 to 150 A

John F. Seely; Raj S. Korde; Frederick A. Hanser; J. Wise; Glenn E. Holland; James L. Weaver; Jack C. Rife

doi:10.1117/12.371077

25 November 1999 Characterization of silicon photodiode detectors with multilayer filter coatings for 17 to 150 A

John F. Seely, Raj S. Korde, Frederick A. Hanser, J. Wise, Glenn E. Holland, James L. Weaver, Jack C. Rife

Proceedings Volume 3764, Ultraviolet and X-Ray Detection, Spectroscopy, and Polarimetry III; (1999) https://doi.org/10.1117/12.371077
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

Silicon photodiode detectors with multilayer coatings were characterized using synchrotron radiation. The coatings were composed of thin layers of metals and other materials and were designed to provide wavelength bandpasses in the 17 - 150 angstrom wavelength region. The measured transmittances of the multilayer coatings are in good agreement with the calculated transmittances. The modeling accounts for the transmittance of the multilayer coating and the deposition of the radiation energy in the underlying silicon photodiode. Detectors with the following layer materials (and wavelength bandpasses were characterized: Fe/Al (17 - 30 angstrom), Mn/Al (19 - 30 Angstrom), V/Al (24 - 35 angstrom), Ti/C (27 - 40 angstrom), Pd/Ti (27 - 50 angstrom), Ti/Zr/Al (27 - 50 angstrom), Ag/CaF₂/Al (36 - 50 angstrom), and Ti/Mo/C (50 - 150 angstrom).

Citation Download Citation

John F. Seely, Raj S. Korde, Frederick A. Hanser, J. Wise, Glenn E. Holland, James L. Weaver, and Jack C. Rife "Characterization of silicon photodiode detectors with multilayer filter coatings for 17 to 150 A", Proc. SPIE 3764, Ultraviolet and X-Ray Detection, Spectroscopy, and Polarimetry III, (25 November 1999); https://doi.org/10.1117/12.371077

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