In-situ UV absorption CF2 sensor for reactive ion etch process control

Hunsuk Kim; Fred Lewis Terry Jr.

doi:10.1117/12.346237

23 April 1999 In-situ UV absorption CF₂ sensor for reactive ion etch process control

Hunsuk Kim, Fred Lewis Terry Jr.

Proceedings Volume 3742, Process and Equipment Control in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346237
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom

Abstract

In this article, we report the use of ultraviolet absorption spectroscopy for CF₂ detection in a large area parallel plate capacitively coupled reactive ion etching system and correlation of data from this and other plasma sensors to the etch rate of SiO₂ and a-Si in CF₄/CHF₃ plasmas. We present statistical models for estimation of a- Si etch rate in the operational regime in which the CF₂ concentration is in the range of 0.4 approximately 1.6 volume % of total gas in the etch chamber. A small change in CF₂ concentration translates into quite a large variation in terms of SiO₂/a-Si etch selectivity, and this makes CF₂ concentration a useful variable in process control. We will show statistically that silicon etch rates can be very well estimated by using sensors for CF₂ and fluorine.

Citation Download Citation

Hunsuk Kim and Fred Lewis Terry Jr. "In-situ UV absorption CF₂ sensor for reactive ion etch process control", Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); https://doi.org/10.1117/12.346237

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