High-voltage resurf DMOS process development using covariance-based response surfaces

Mark Redford; Martin Fallon; Anthony J. Walton; Z. A. Shafi; Jim McGinty; Ian Underwood

doi:10.1117/12.346231

23 April 1999 High-voltage resurf DMOS process development using covariance-based response surfaces

Mark Redford, Martin Fallon, Anthony J. Walton, Z. A. Shafi, Jim McGinty, Ian Underwood

Proceedings Volume 3742, Process and Equipment Control in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346231
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom

Abstract

This paper compares the performance of quadratic and covariance models for a RESURF device. TCAD is used in conjunction with a CCI design and both response surfaces and response variances are compared for both models. Experimentally measured distributions are compared with those predicted by TCAD and the differences used to help identify other possible sources of variation.

Citation Download Citation

Mark Redford, Martin Fallon, Anthony J. Walton, Z. A. Shafi, Jim McGinty, and Ian Underwood "High-voltage resurf DMOS process development using covariance-based response surfaces", Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); https://doi.org/10.1117/12.346231

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