Paper
5 March 1999 Quantum coherent dynamics of free carriers in semiconductors
Cornelius Fuerst, Alfred Leitenstorfer, Alfred Laubereau
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Proceedings Volume 3735, ICONO '98: Ultrafast Phenomena and Interaction of Superstrong Laser Fields with Matter: Nonlinear Optics and High-Field Physics; (1999) https://doi.org/10.1117/12.341451
Event: ICONO '98: Laser Spectroscopy and Optical Diagnostics: Novel Trends and Applications in Laser Chemistry, Biophysics, and Biomedicine, 1998, Moscow, Russian Federation
Abstract
Synchronized femtosecond pulses of different wavelength and bandwidth are used to investigate intraband and interband coherent effects in polar semiconductors. At low excitation densities the relaxation of nonthermal electron distributions by spontaneous emission of LO phonons in GaAs is monitored. Quantum kinetic behavior of the dynamics beyond the semiclassical Boltzmann equation is demonstrated for the first time. Violation of the energy conservation as well as memory effects are shown to occur on an ultrashort time scale of 100 fs. For strong excitation we present the first observation of Rabi-oscillations of the occupation density in the absorption continuum of InP. Despite high carrier densities exceeding 1018 cm-3 dephasing time are long enough to allow for the appearance of two strongly damped Rabi-cycles at a peak intensity of the pump pulses of 17 GW/cm2.
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Cornelius Fuerst, Alfred Leitenstorfer, and Alfred Laubereau "Quantum coherent dynamics of free carriers in semiconductors", Proc. SPIE 3735, ICONO '98: Ultrafast Phenomena and Interaction of Superstrong Laser Fields with Matter: Nonlinear Optics and High-Field Physics, (5 March 1999); https://doi.org/10.1117/12.341451
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KEYWORDS
Phonons

Semiconductors

Polarization

Scattering

Gallium arsenide

Ultrafast phenomena

Absorption

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