Zygmunt Frukacz,1 Zygmunt Mierczyk,2 Dorota A. Pawlak3
1Institute of Electronic Materials Technology (Poland) 2Military Univ. of Technology (Poland) 3Institute of Electronic Materials Technology and Univ. of Warsaw (Poland)
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In this work we present results on YAG:V3+ single crystal growth and examination for the purposes of Q- switching of laser resonator in the near IR band. A number of YAG single crystals doped with different concentrations of V3+ ions were obtained by the Czochralski method. The absorption and emission spectra measurements on those crystals are presented. After crystal growth only a small part of vanadium atoms is introduced into a crystal structure as V3+ ions in tetrahedral positions, the other ones are at different positions or at higher charge states V4+ and V5+. Receiving of vanadium ions of V3+ valency in the desired points of YAG structure can be possible as a result of complex reactions in solid- state phase. Such reactions proceed during the process of a multi-stage crystal annealing in reducing atmosphere and in vacuum.
Zygmunt Frukacz,Zygmunt Mierczyk, andDorota A. Pawlak
"YAG:V3+single crystal growth and their selected properties", Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); https://doi.org/10.1117/12.343018
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Zygmunt Frukacz, Zygmunt Mierczyk, Dorota A. Pawlak, "YAG:V3+ single crystal growth and their selected properties," Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); https://doi.org/10.1117/12.343018