Hall and photo-Hall effects in n-CuInS2 crystals

D. Cybulski; A. Opanowicz

doi:10.1117/12.343005

24 March 1999 Hall and photo-Hall effects in n-CuInS₂ crystals

D. Cybulski, A. Opanowicz

Proceedings Volume 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications; (1999) https://doi.org/10.1117/12.343005
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

The n-CuInS₂ crystals were grown from the In-rich melt of Cu, In, and S compounds using the Bridgman method. The crystals were grown at two different cooling rates (crystals I and II). The crystals I show two types of temperature dependence of the electron mobility related to different temperature ranges ((mu) _o approximately T^3/2 and (mu) _o approximately T^3/2) connected with the impurities and phonons scattering of electrons. The electron mobility of the crystals I is independent of the illumination with white light. On the other hand, the crystals II show strong temperature dependence of the electron mobility ((mu) _o approximately T^5/2), which changes drastically its character ((mu) approximately T^3/2) when illuminated with white light.

Citation Download Citation

D. Cybulski and A. Opanowicz "Hall and photo-Hall effects in n-CuInS₂ crystals", Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); https://doi.org/10.1117/12.343005

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KEYWORDS

Crystals

Temperature metrology

Light scattering

Scattering

Copper indium disulfide

Semiconductors

Copper

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